SPIE Photonics West 2023

2023/01/28 - 2023/02/01

San Francisco, California


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Join us at the SPIE Photonics West and meet with our experts.

Join our presentations at the SPIE Photonics West 2023

1st speaking slot

Topic: Advances in 9xx nm edge-emitting high-power pulse laser diodes for LiDAR applications
Time: 29 January 2023 from 10:30 AM - 11:00AM PST
Location: Moscone Center, Room 205 (Level 2 South)

We report on recent advances in infrared edge-emitting pulsed laser diodes for time-of-flight LIDAR. We reduced the temperature-induced wavelength shift of our monolithically stacked waveguides from initially 30nm to only 4nm over a heatsink temperature range from 25°C to 125°C, featuring a power penalty below 5%. We demonstrate 60% output power scaling by increasing the number of waveguide stages in the epitaxy structure, resulting in 910nm short-pulse peak power of 240W at 50A from a single device with a near field width of ~220µm. We evaluate performance improvements of devices with 900µm and 1200µm cavity length compared to standard 600µm. 

Speaker: Christian Lauer 


2nd speaking slot

Topic: Laser-based projection displays for all-day-use consumer AR glasses 
Time: 30 January 2023 from 3:40 PM - 4:00 PM PST 

Augmented Reality (AR) or smart glasses might be the next big thing in the field of wearable consumer electronics. Ideas, concepts and even products exist since a while but still they are all quite far away from being perfect. AR glasses act as an add-on to the smartphone or -watch, bringing the visual content to the line of sight with no need to look at the mobile device’s display. All-day-use glasses need to look fashionable, need to provide a high level of wearing comfort (weight, heat dissipation) and should provide a reasonable battery live time which enables several hours of operation. Laser Beam Scanning (LBS) might be the display technology of choice for such consumer AR glasses because it enables ultra-small optical engine sizes of below 1cc and the laser diodes can be switched off for image areas without content. But there are also many technical challenges to overcome. Beside the complexity of the scanning itself the interaction of the coherent laser light with the optical combiner optics can lead to image artefact. In this paper we present the ams- Osram laser source solution and give an outlook how to further improve system performance. 

Speaker: Stefan Morgott


3rd speaking slot

Topic: LED based projection displays are the enabler for the 1st generation of consumer AR smart glasses 
Time: 30 January 2023 from 3:20 PM - 3:40 PM PST 

Small projector units for Near-To-Eye (NTE) displays such as AR glassed are currently a field of intensive research and development activity. To industrialize the first generation of user-friendly consumer smart glasses we propose using LED based solutions. LED illuminated DLP/LCoS pico-projectors are a mature technology which can be further optimized for the use in AR glasses. This article paper will share some updates on recent LED based NTE activities, and describe important design challenges such as etendue match, integration size and power efficiency. 

Speaker: Andreas Bauer


4th speaking slot

Topic: InGaN semiconductor laser diodes for the visible spectral range: design and process optimization of single emitters and bars for applications from mW to kW output power
Time: 1 February 2023 from 8:30 AM - 9:00 AM PST
Location: Moscone Center, Room 152 (Upper Mezzanine South)

InGaN semiconductor laser diodes for the visible spectral range: design and process optimization of single emitters and bars for applications from mW to kW output powerInGaN lasers in the blue and green wavelength range have opened a wide variety of applications in the past years, which all require unique properties of the employed laser chips. In this paper we will show design and process developments for various InGaN laser designs, each optimized for its specific application. For applications which are very sensitive to energy consumption, like mobile AR/VR devices, we investigated InGaN laser chips with resonator lengths as short as 50 μm. To achieve this, we developed an etched facets technology to overcome the challenges of scribing and breaking for facet generation for such short resonator lengths. The etched facets of these devices are coated on-wafer with a dielectric mirror to achieve the desired reflectivity. Depending on the reflectivity chosen, these devices show ultra-low threshold currents below 3mA and output powers above 50 mW. Combined with a flip-chip design with both contacts on one side, such chips can be integrated into silicon wafer-based beam combiners to generate RBG PIC chips for VR/AR laser projection. For high power applications, we will present data of laser bars. Bars emitting at 430 nm achieved 100 W of continuouswave output power per bar and conversion efficiencies of 50%. Together with bars emitting at 450 nm, that were shown in previous publications, wavelength-multiplexing for materials-processing systems can be realized yielding blue laser light sources with multiple kilowatts of output powers. 

Speaker: Sven Gerhard

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Our experts are available in San Francisco. If you would like to meet them, please contact Karl Leahy to schedule a meeting.  We look forward to meeting you!