Through Silicon Via (TSV) Technology
TSV Technology as the key differentiator for miniaturization and high performance in advanced sensor manufacturing
Building on decades of mixed‑signal CMOS experience across 180 nm and 350 nm platforms, ams OSRAM has implemented next‑generation TSV (Through Silicon Via) technology at our production facility in Premstaetten, Austria, as an integral part of the 180 nm manufacturing flow.
With established TSV‑last methods and deep optical‑sensing expertise, the TSV platform has evolved to the 180 nm node, enabling even smaller devices, superior electrical performance, and seamless integration with high‑end interference filters. This first‑of‑its‑kind setup establishes a robust foundation for high‑performance, miniaturized optical and sensing products and strengthens Europe’s capability in highly specialized semiconductor manufacturing.
ams OSRAM has now developed a new TSV technology compatible with the 180 nm CMOS node and integrated interference filter technology.
This enables:
- Improved die size through significant reduction of die area, enabling higher functional density at more dies per wafer
- Enhanced electrical performance
- Better ecological footprint through reduced material and energy use
- Supporting further miniaturization, enabling next‑generation optical products
An exemplary TSV chip structure is shown in the figure on the right.
Through Silicon Via technology: What makes TSV the backbone of next‑generation sensor integration
Through Silicon Vias (TSVs) are vertical electrical connections that pass directly through the silicon substrate. This architecture shortens signal paths and significantly reduces parasitic effects, enabling lowest noise, lower power consumption, and improved thermal behavior.
TSV technology is already a key enabler in a wide range of products and markets:
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Industrial and Consumer electronics: Spectral, UV, and color sensors leverage TSV’s compact form factor and excellent electrical characteristics.
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Medical imaging: Computed Tomography detectors rely on TSV technology for ultrafast and low-noise signal transfer.
Compared to traditional packaging methods such as wire bonding or flip‑chip, TSV‑based devices can achieve a 30–70% smaller footprint, superior electrical performance, and reduced electromagnetic interference. ams OSRAM’s TSV‑last approach uses proven CMOS process steps while eliminating glass carrier wafers, thus avoiding unwanted optical reflections and maximizing sensor efficiency. Established TSV platforms based on 100µm and 80µm hole diameter provide robust reliability and strong mechanical stability, making them ideal for advanced sensing applications.
Key advantages at a glance:
- Smaller, thinner products thanks to vertical routing and compact 3D integration
- Better performance: faster signals, higher bandwidth, lower parasitic effects
- Lower power consumption due to shorter interconnect paths
- Improved thermal behavior and higher reliability, even for automotive and medical use
- Higher integration: more functionality in less space (CMOS + filter + TSV)
- One stop shop through fully in‑house CMOS / TSV / Filter processing