OSRAM SIDELED®, SFH 325 FA

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Beschreibung

Silicon NPN Phototransistor in SMT SIDELED®-Package

Details

Parameter

Photocurrent
45.0 µA
Fall time
tf
7.0 µs
Rise time
tf
7.0 µs
Spectral range of sensitivity typ.
λ10% min.
750 nm
λ10% max.
1120 nm
Radiant sensitive area
A
0.038 mm²
Beam angle
120 °
Dimension
l
4.0 mm
w
3.6 mm
h
4.0 mm
Operating temperature
Top min.
-40 °C
Top max.
100 °C

Bestellnummern

Produkt-Typ Beschreibung Bestellnummer Verfügbarkeit
SFH 325 FA-3/4-Z IPCE = 28 ... 71 µA, (IPCE=45 µA typ.) (Ee=0.1 mW/cm²) Q65110A2490
SFH 325 FA-4-Z IPCE = 45 ... 71 µA, (IPCE=45 µA typ.) (Ee=0.1 mW/cm²) Q65110A2485
SFH 325 FA-3-Z IPCE = 28 ... 45 µA, (IPCE=45 µA typ.) (Ee=0.1 mW/cm²) Q65110A2482
SFH 325 FA-Z IPCE = 18 ... 71 µA, (IPCE=45 µA typ.) (Ee=0.1 mW/cm²) Q65110A2487