The core technologies of our Full Service Foundry consist of 0.18µm CMOS and BCD, 0.35µm digital and mixed signal CMOS, ultra-low noise CMOS, High-Voltage CMOS and SiGe-BICMOS processes. As all base processes are compatible with major semiconductor manufacturers, alternative sourcing can be accommodated at minimal effort.
0.18µm CMOS / BCD
The 180nm CMOS specialty analog, mixed-signal process has been transferred into ams OSRAM's 200mm wafer fab facility in Austria. The C18 specialty process is suitable for sensors and sensor interface devices in a wide variety of applications such as wearables, healthcare, home automation, smart cars and industry 4.0.
0.35µm digital and mixed signal CMOS
ams OSRAM 0.35μm CMOS process family is fully compatible to the 0.35μm mixed signal base process licensed from TSMC. The high-density CMOS standard cell library optimized for synthesis and 3- and 4-layer routing guarantees highest gate densities. Peripheral cell libraries are available for 3.3V and 5V with high driving capabilities and excellent ESD performance. Qualified digital macro blocks (SPRAM, DPRAM, and diffusion programmable ROM) are available. A variety of high performance analog-to-digital and digital-to-analog converters can be provided for integration on the same ASIC.
- 0.35µm CMOS process details (C35)
- 0.35µm Opto-CMOS process details (C35O)
Additional process options for CMOS processes
CMOS-LVT; Embedded memories: NVM, RAM, ROM, OTP